Title :
A high-responsivity high-bandwidth asymmetric twin-waveguide coupled InGaAs-InP-InAlAs avalanche photodiode
Author :
Jian Wei ; Fengnian Xia ; Forrest, S.R.
Author_Institution :
Dept. of Electr. Eng., Princeton Univ., NJ, USA
Abstract :
The authors demonstrate an integratable high-responsivity high-bandwidth long wavelength InGaAs-InP-InAlAs avalanche photodiode based on an asymmetric twin-waveguide structure. The device has an external quantum efficiency of 48 /spl plusmn/ 1.5% at /spl lambda/ = 1.55 μm, a 3-dB bandwidth of 28.5 /spl plusmn/ 0.5 GHz with gain of up to 4, and a fiber-to-waveguide misalignment tolerance of /spl plusmn/ 1.0 μm in the vertical and /spl plusmn/ 1.3 μm in the horizontal directions resulting in a 1-dB sensitivity penalty.
Keywords :
III-V semiconductors; aluminium compounds; avalanche photodiodes; gallium arsenide; indium compounds; optical communication equipment; optical waveguides; photodetectors; 1.55 micron; 28.5 GHz; 48 percent; InGaAs-InP-InAlAs; InGaAs-InP-InAlAs high-responsivity high-bandwidth asymmetric twin-waveguide coupled avalanche photodiode; asymmetric twin-waveguide structure; external quantum efficiency; fiber-to-waveguide misalignment tolerance; horizontal directions; integratable long wavelength avalanche photodiode; sensitivity penalty; vertical directions; Absorption; Avalanche photodiodes; Bandwidth; Indium phosphide; Optical coupling; Optical devices; Optical fiber communication; Optical fiber couplers; Optical fiber devices; Optical waveguides;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2002.803894
