Title :
Fused InGaAs-Si avalanche photodiodes with low-noise performances
Author :
Kang, Y. ; Mages, P. ; Clawson, A.R. ; Yu, P.K.L. ; Bitter, M. ; Pan, Z. ; Pauchard, A. ; Hummel, S. ; Lo, Y.H.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA
Abstract :
A fused InGaAs-Si avalanche photodiode (APD) with a low excess noise factor of 2.3 at a gain of 20 is reported. This corresponds to a k factor of 0.02 for the silicon avalanche region. Dark current density as low as 0.04 mA/cm/sup 2/ at -5 V and 0.6 mA/cm/sup 2/ at a gain of 10 are measured; a small thermal coefficient, 0.09%//spl deg/C, of the breakdown voltage is observed for this APD.
Keywords :
III-V semiconductors; avalanche photodiodes; current density; dark conductivity; gallium arsenide; indium compounds; optical communication equipment; optical noise; silicon; 5 V; InGaAs-Si; breakdown voltage; dark current density; fused InGaAs-Si avalanche photodiodes; low excess noise factor; low-noise performances; silicon avalanche region; small thermal coefficient; Avalanche photodiodes; Current measurement; Dark current; Ionization; Optical fiber communication; Optical fiber networks; Optical noise; Optical receivers; Silicon; Tunneling;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2002.803370
