Title :
Analytic Large-Signal Modeling of Silicon RF Power MOSFETs
Author :
Fioravanti, Paolo ; Spulber, Oana ; De Souza, Maria Merlyne
Author_Institution :
Emerging Technol. Res. Centre, De Montfort Univ., Leicester
fDate :
5/1/2007 12:00:00 AM
Abstract :
This paper provides novel analytic expressions and methodology for predicting the large-signal gain of RF power MOSFETs. The expressions are derived from a model that includes input and output matching impedances, source inductance, and gate resistance. Using the load line concept superimposed on a nonlinear current generator, this paper demonstrates reasonably accurate predictions of gain and gain compression point
Keywords :
amplification; impedance matching; inductance; microwave field effect transistors; microwave power transistors; power MOSFET; semiconductor device models; gain compression point; gain prediction; gate resistance; impedance matching; large-signal modeling; load line concept; nonlinear current generator; semiconductor device model; silicon RF power MOSFET; source inductance; Capacitance; Circuits; Impedance matching; Inductance; MOSFETs; Microwave amplifiers; Microwave devices; Radio frequency; Silicon; Transconductance; Circuit analysis; impedance matching; microwave power amplifiers; semiconductor device model;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2007.895403
