Reduced charge trapping in GaN MIS using gate oxide deposition technique

A novel gate oxide deposition technique, thermal oxidation of deposited silicon (thermal-oxide), to realise a metal insulator semiconductor (MIS) structure on GaN is reported. Reduced gate leakage current and less flat-band voltage drift are achieved compared to plasma enhanced chemical vapour deposition to SiO₂ deposited on GaN. The deposition and oxidation conditions have been optimised to achieve a high quality oxide/GaN interface.