GaSb-based tapered diode lasers at 1.93 μm with 1.5-W nearly diffraction-limited power

Author

Pfahler, C. ; Kaufel, G. ; Kelemen, M.T. ; Mikulla, Michael ; Rattunde, M. ; Schmitz, J. ; Wagner, J.

Author_Institution

Fraunhofer-Inst. fuer Angewandte Festkoerperphys., Freiburg, Germany

Volume

18

Issue

6

fYear

2006

fDate

3/15/2006 12:00:00 AM

Firstpage

758

Lastpage

760

Abstract

High-power high-brightness 1.93-μm wavelength (AlGaIn)(AsSb) tapered diode lasers with a narrow vertical waveguide design are reported for the first time. A nearly diffraction-limited continuous-wave output power of 1.5 W together with a remarkable low fast axis divergence of 43/spl deg/ full-width at half-maximum have been demonstrated. The maximum brightness amounts to 32 MW/cm²sr.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; laser beams; light diffraction; semiconductor lasers; waveguide lasers; 1.5 W; 1.93 mum; AlGaInAsSb; GaSb-based lasers; fast axis divergence; high-brightness lasers; high-power lasers; narrow vertical waveguide design; nearly diffraction-limited power; tapered diode lasers; Brightness; Diffraction; Diode lasers; Fiber lasers; Gas lasers; Laser beams; Optical design; Optical waveguides; Power generation; Waveguide lasers; AlGaAsSb; GaInAsSb; GaSb; high brightness; midinfrared; molecular beam epitaxy; semiconductor laser; tapered laser;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2006.871679

Filename

1599433