DocumentCode :
844120
Title :
GaInP/GaAs HBT Sub-Harmonic Gilbert Mixers Using Stacked-LO and Leveled-LO Topologies
Author :
Wu, Tzung-Han ; Tseng, Sheng-Che ; Meng, Chin-Chun ; Huang, Guo-Wei
Author_Institution :
Dept. of Commun. Eng., Nat. Chiao Tung Univ., Hsinchu
Volume :
55
Issue :
5
fYear :
2007
fDate :
5/1/2007 12:00:00 AM
Firstpage :
880
Lastpage :
889
Abstract :
This paper discusses and demonstrates the most popular sub-harmonic Gilbert mixers in 2-mum GaInP/GaAs HBT technology. High two local oscillators (2LO)-to-RF isolation is important to alleviate the self-mixing problem of the sub-harmonic mixer. The demonstrated GaInP/GaAs HBT stacked-local oscillator (LO) mixer topology has achieved the best 2LO-to-RF isolation when compared with the previous literature. On the other hand, the leveled-LO sub-harmonic mixers have advantages in terms of the high speed and low dc supply voltage at the cost of much larger LO pumping power. Among all the structures, the bottom-LO sub-harmonic mixer has the lowest current consumption and the simplest circuit structure at the expense of the 2LO-to-RF isolation
Keywords :
III-V semiconductors; bipolar integrated circuits; gallium arsenide; gallium compounds; indium compounds; microwave integrated circuits; microwave mixers; oscillators; wide band gap semiconductors; 2 micron; DC offset; GaInP-GaAs; HBT; heterojunction bipolar transistor; leveled-local oscillator topology; local oscillators-to-RF isolation; pumping power; self-mixing; stacked-local oscillator topology; sub-harmonic Gilbert mixers; Circuits; Costs; Gallium arsenide; Heterojunction bipolar transistors; Local oscillators; Mixers; Passive filters; Radio frequency; Topology; Transceivers; DC offset; GaInP/GaAs HBT; Gilbert mixer; self-mixing; sub-harmonic mixer; two local oscillators (2LO)-to-RF isolation;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/TMTT.2007.895169
Filename :
4195685
Link To Document :
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