Title :
Silicon micromechanical structures fabricated by electrochemical process
Author :
Dantas, Michel O S ; Galeazzo, Elisabete ; Peres, Henrique E M ; Ramirez-Fernandez, Francisco Javier
Author_Institution :
Escola Politecnica, Univ. de Sao Paulo, Brazil
Abstract :
Silicon micromechanical structures were fabricated by means of sacrificial layers defined with porous silicon and masked by hydrogen ion implantation with adequate thermal annealing. The fabrication process to remove the porous silicon layers with diluted potassium hydroxide at room temperature does not cause damage to the remaining silicon microstructures, which are less than 1 μm in thickness controlled by process parameters.
Keywords :
annealing; anodisation; elemental semiconductors; etching; ion implantation; micromachining; micromechanical devices; porous semiconductors; silicon; 1 micron; diluted potassium hydroxide; electrochemical process; hydrogen ion implantation; porous silicon; process parameters; room temperature; sacrificial layers; silicon micromechanical structures fabrication; silicon microstructures; thermal annealing; Annealing; Electrochemical processes; Fabrication; Hydrogen; Ion implantation; Micromechanical devices; Microstructure; Process control; Silicon; Temperature control;
Journal_Title :
Sensors Journal, IEEE
DOI :
10.1109/JSEN.2003.820365