DocumentCode :
844388
Title :
Silicon micromechanical structures fabricated by electrochemical process
Author :
Dantas, Michel O S ; Galeazzo, Elisabete ; Peres, Henrique E M ; Ramirez-Fernandez, Francisco Javier
Author_Institution :
Escola Politecnica, Univ. de Sao Paulo, Brazil
Volume :
3
Issue :
6
fYear :
2003
Firstpage :
722
Lastpage :
727
Abstract :
Silicon micromechanical structures were fabricated by means of sacrificial layers defined with porous silicon and masked by hydrogen ion implantation with adequate thermal annealing. The fabrication process to remove the porous silicon layers with diluted potassium hydroxide at room temperature does not cause damage to the remaining silicon microstructures, which are less than 1 μm in thickness controlled by process parameters.
Keywords :
annealing; anodisation; elemental semiconductors; etching; ion implantation; micromachining; micromechanical devices; porous semiconductors; silicon; 1 micron; diluted potassium hydroxide; electrochemical process; hydrogen ion implantation; porous silicon; process parameters; room temperature; sacrificial layers; silicon micromechanical structures fabrication; silicon microstructures; thermal annealing; Annealing; Electrochemical processes; Fabrication; Hydrogen; Ion implantation; Micromechanical devices; Microstructure; Process control; Silicon; Temperature control;
fLanguage :
English
Journal_Title :
Sensors Journal, IEEE
Publisher :
ieee
ISSN :
1530-437X
Type :
jour
DOI :
10.1109/JSEN.2003.820365
Filename :
1254546
Link To Document :
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