Title :
Charge trapping and degradation of HfO2/SiO2 MOS gate stacks observed with enhanced CAFM
Author :
Aguilera, L. ; Porti, M. ; Nafría, M. ; Aymerich, X.
Author_Institution :
Dept. de Enginyeria Electron., Univ. Autonoma de Barcelona, Bellaterra, Spain
fDate :
3/1/2006 12:00:00 AM
Abstract :
In this letter, a prototype of conductive atomic force microscope with enhanced electrical performance has been used to separately investigate the effect of the electrical stress on the SiO2 and the HfO2 layers of a high-κ gate stack. Charge trapping in HfO2 native defects and degradation of both layers have been observed, depending on the stress level.
Keywords :
MIS devices; MIS structures; atomic force microscopy; electron traps; hafnium compounds; high-k dielectric thin films; semiconductor device breakdown; silicon compounds; HfO2-SiO2; MOS gate stacks; charge trapping; conductive atomic force microscope; degradation; dielectric breakdown; electrical stress; high-k dielectric gate stack; Atomic force microscopy; Atomic layer deposition; Current measurement; Degradation; Electric variables measurement; Hafnium oxide; Stress; Substrates; Testing; Voltage; Atomic force microscopy (AFM); MOS device; dielectric breakdown; high-;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2006.869799
