• DocumentCode
    844471
  • Title

    Charge trapping and degradation of HfO2/SiO2 MOS gate stacks observed with enhanced CAFM

  • Author

    Aguilera, L. ; Porti, M. ; Nafría, M. ; Aymerich, X.

  • Author_Institution
    Dept. de Enginyeria Electron., Univ. Autonoma de Barcelona, Bellaterra, Spain
  • Volume
    27
  • Issue
    3
  • fYear
    2006
  • fDate
    3/1/2006 12:00:00 AM
  • Firstpage
    157
  • Lastpage
    159
  • Abstract
    In this letter, a prototype of conductive atomic force microscope with enhanced electrical performance has been used to separately investigate the effect of the electrical stress on the SiO2 and the HfO2 layers of a high-κ gate stack. Charge trapping in HfO2 native defects and degradation of both layers have been observed, depending on the stress level.
  • Keywords
    MIS devices; MIS structures; atomic force microscopy; electron traps; hafnium compounds; high-k dielectric thin films; semiconductor device breakdown; silicon compounds; HfO2-SiO2; MOS gate stacks; charge trapping; conductive atomic force microscope; degradation; dielectric breakdown; electrical stress; high-k dielectric gate stack; Atomic force microscopy; Atomic layer deposition; Current measurement; Degradation; Electric variables measurement; Hafnium oxide; Stress; Substrates; Testing; Voltage; Atomic force microscopy (AFM); MOS device; dielectric breakdown; high-;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2006.869799
  • Filename
    1599465
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=844471