Title :
An assessment of single-electron effects in multiple-gate SOI MOSFETs with 1.6-nm gate oxide near room temperature
Author :
Lee, Wei ; Su, Pin ; Chen, Hou Yu ; Chang, Chang Yun ; Su, Ke Wei ; Liu, Sally ; Yang, Fu Liang
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan
fDate :
3/1/2006 12:00:00 AM
Abstract :
This letter provides an assessment of single-electron effects in ultrashort multiple-gate silicon-on-insulator (SOI) MOSFETs with 1.6-nm gate oxide. Coulomb blockade oscillations have been observed at room temperature for gate bias as low as 0.2 V. The charging energy, which is about 17 meV for devices with 30-nm gate length, may be modulated by the gate geometry. The multiple-gate SOI MOSFET, with its main advantage in the suppression of short-channel effects for CMOS scaling, presents a very promising scheme to build room-temperature single-electron transistors with standard silicon nanoelectronics process.
Keywords :
MOSFET; nanoelectronics; silicon-on-insulator; single electron transistors; 1.6 nm; CMOS scaling; Coulomb blockade oscillations; charging energy; gate geometry; room temperature; short-channel effects; silicon nanoelectronics process; single electron transistors; single-electron effects; ultrashort multiple-gate SOI MOSFET; CMOS process; Geometry; Large-scale systems; Low power electronics; MOSFETs; Nanoelectronics; Silicon on insulator technology; Single electron transistors; Temperature; Tunneling; CMOS; coulomb blockade oscillation; multiple gate; silicon-on-insulator (SOI); single-electron effect; single-electron transistor;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2006.870240
