On the generation and recovery of hot carrier induced interface traps: a critical examination of the 2-D R-D model

Author

Saha, D. ; Varghese, D. ; Mahapatra, S.

Author_Institution

Dept. of Electr. Eng., Indian Inst. of Technol., Mumbai, India

Volume

27

Issue

3

fYear

2006

fDate

3/1/2006 12:00:00 AM

Firstpage

188

Lastpage

190

Abstract

The generation and recovery of interface traps (N_IT) during and after hot carrier injection stress is evaluated by the recently proposed two-dimensional (2-D) reaction diffusion (R-D) model. The power law time exponent (n) of N_IT generation as well as the magnitude of fractional and absolute recovery after the stress cannot be fully explained by considering only the spatial extent of broken ≡Si-H bonds, as is done by 2-D R-D model. Additional contribution due to broken ≡Si-O bonds also plays a major role in determining the overall N_IT generation and recovery behavior.

Keywords

MOSFET; Monte Carlo methods; charge injection; hot carriers; interface states; internal stresses; semiconductor device models; charge pumping; hot carrier injection stress; interface traps; power law time exponent; reaction diffusion model; Charge carrier processes; Degradation; Hot carrier injection; Hot carriers; Human computer interaction; MOSFET circuits; Niobium compounds; Pulse measurements; Stress measurement; Titanium compounds; Charge pumping; hot carrier injection; interface traps; reaction diffusion model;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2006.870241

Filename

1599475