Title :
Intrinsic modulation bandwidth in ultra-high-speed 1.3 and 1.55 mu m GaInAsP DFB lasers
Author :
Uomi, K. ; Nakano, H. ; Chinone, N.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
Abstract :
By using an ultra-low capacitance structure, the wavelength dependence, 1.3 or 1.55 mu m, of the intrinsic modulation bandwidth relating to the relaxation oscillation frequency and the nonlinear damping in GaInAsP DFB lasers is investigated.
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; optical communication equipment; optical modulation; semiconductor junction lasers; 1.3 micron; 1.55 micron; DFB lasers; GaInAsP; intrinsic modulation bandwidth; nonlinear damping; relaxation oscillation frequency; ultra high speed lasers; ultra-low capacitance structure; wavelength dependence;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19891129
