• DocumentCode
    844690
  • Title

    Intrinsic modulation bandwidth in ultra-high-speed 1.3 and 1.55 mu m GaInAsP DFB lasers

  • Author

    Uomi, K. ; Nakano, H. ; Chinone, N.

  • Author_Institution
    Central Res. Lab., Hitachi Ltd., Tokyo, Japan
  • Volume
    25
  • Issue
    25
  • fYear
    1989
  • Firstpage
    1689
  • Lastpage
    1690
  • Abstract
    By using an ultra-low capacitance structure, the wavelength dependence, 1.3 or 1.55 mu m, of the intrinsic modulation bandwidth relating to the relaxation oscillation frequency and the nonlinear damping in GaInAsP DFB lasers is investigated.
  • Keywords
    III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; optical communication equipment; optical modulation; semiconductor junction lasers; 1.3 micron; 1.55 micron; DFB lasers; GaInAsP; intrinsic modulation bandwidth; nonlinear damping; relaxation oscillation frequency; ultra high speed lasers; ultra-low capacitance structure; wavelength dependence;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19891129
  • Filename
    41968
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=844690