Low-Loss Differential Semicoaxial Interconnects in CMOS Process

Author

Jin, Jun-De ; Hsu, Shawn S H ; Yang, Ming-Ta ; Liu, Sally

Author_Institution

Dept. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu

Volume

54

Issue

12

fYear

2006

Firstpage

4333

Lastpage

4340

Abstract

Design, characterization, and modeling of differential semicoaxial interconnects based on a standard 0.18-mum CMOS process are presented for the first time. The differential semicoaxial line shows a low differential-mode attenuation constant of ~1.00 dB/mm at 50 GHz and a slow-wave factor above 3.1 over a wide frequency range. The characteristics of differential semicoaxial lines for differential mode, common mode, slow-wave effect, and coupling effect are also investigated in details based on the measured mixed-mode S-parameters. The lumped RLGC circuit is adopted to model the CMOS differential semicoaxial lines. An excellent agreement between the measured and modeled results is obtained up to 50 GHz

Keywords

CMOS analogue integrated circuits; MMIC; S-parameters; integrated circuit interconnections; 0.18 micron; 50 GHz; CMOS process; common mode semicoaxial lines; coupling effect; differential mode semicoaxial lines; differential semicoaxial interconnects; lumped RLGC circuit; mixed mode S-parameter; slow wave effect; CMOS process; CMOS technology; Coplanar waveguides; Coupling circuits; Crosstalk; Frequency; Integrated circuit interconnections; Microstrip; Semiconductor device modeling; Substrates; CMOS; differential line; lumped $RLGC$; mixed-mode $S$-parameters; semicoaxial interconnects;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/TMTT.2006.886000

Filename

4020456