Title :
1.5 μm λ/4 shifted multiple quantum well distributed feedback laser diodes
Author :
Sasaki, T. ; Takano, Shigeru ; Henmi, N. ; Yamada, Hiroyoshi ; Kitamura, Masayuki ; Hasumi, H. ; Mito, I.
Author_Institution :
Opto-Electron Res. Labs, NEC Corp., Kawasaki
fDate :
11/10/1988 12:00:00 AM
Abstract :
1.5 μm λ/4 shifted multiple quantum well distributed feedback laser diodes have been achieved for the first time. A characteristic temperature value for a threshold current at around room temperature was as high as 88 K. Spectra at 0.9 times the threshold current showed substantial TM mode suppression. The MQW active region consists of four GaInAs wells (75 Å thick) and GaInAsP barriers (λg=1.15 μm, 150 Å thick) grown by metalorganic vapour phase epitaxy (MOVPE). 1.3 μm GaInAsP was grown as an optical guide layer
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; laser modes; laser transitions; optical communication equipment; semiconductor junction lasers; vapour phase epitaxial growth; 1.5 micron; 88 K; DFB laser; GaInAs-GaInAsP; III-V semiconductors; MOVPE; MQW active region; TM mode suppression; characteristic temperature value; distributed feedback laser diodes; metalorganic vapour phase epitaxy; multiple quantum well; one quarter wavelength shifted laser; room temperature; semiconductor lasers; single longitudinal mode operation; threshold current;
Journal_Title :
Electronics Letters
