Lithium-Doped Drift-Field Radiation-Resistant P/N-Type Silicon Solar Cells

Gamma-rays, 2 MeV electrons and fast neutrons were irradiated on lithium doped p/n-type cells, drift field cells and lithium-doped drift-field cells in order to estimate their radiation-resistant properties. Damage Coefficients, K=(1/¿i-1/¿0).¿-1, of the cells were measured. The damage coefficient of the lithium doped drift field p/n-type cell was 1/3 to 1/2 of those other two type cells. The defect energy level, E -0.18 eV, was introduced by gamma-rays in lithium non-doped and lithium doped cell.