Title :
A Nonquasi-Static Empirical Model of Electron Devices
Author :
Santarelli, Alberto ; Di Giacomo, Valeria ; Raffo, Antonio ; Traverso, Pier Andrea ; Vannini, Giorgio ; Filicori, Fabio
Author_Institution :
Dept. of Electron., Univ. of Bologna
Abstract :
A new nonquasi-static nonlinear model of electron devices is proposed by adopting a perturbed charge-controlled approach. The model is based on the definition of a virtual quasi-static device, associated with the actual one, which is controlled by means of equivalent voltage sources. The advantage of this approach is that conventional purely quasi-static models can be still adopted even at very high frequencies, if suitable equivalent voltages are applied. Identification from small-signal measurements and implementation into commercially available computer-aided design tools of the new nonquasi-static model are described in this paper. Finally, by considering a GaAs p-high electron mobility transistor, accurate prediction capabilities at microwaves and millimeter frequencies are experimental verified and compared with a more conventional equivalent-circuit-based model
Keywords :
III-V semiconductors; gallium arsenide; high electron mobility transistors; microwave field effect transistors; millimetre wave field effect transistors; semiconductor device models; GaAs; computer-aided design tools; electron devices; equivalent voltage sources; equivalent-circuit-based model; field-effect transistors; millimeter-wave devices; nonquasistatic empirical model; p-high electron mobility transistor; perturbed charge-controlled approach; semiconductor device modeling; Delay; Design automation; Electron devices; FETs; Frequency; Gallium arsenide; Microwave communication; Millimeter wave devices; Predictive models; Voltage control; Circuit modeling; field-effect transistors (FETs); millimeter-wave devices; semiconductor device modeling;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2006.885879
