Title :
Nonequivalent heterointerfaces in AlGaAs/GaAs double barrier resonant tunnelling diodes grown by metalorganic vapour phase epitaxy
Author :
Tews, H. ; Schnell, R.D. ; Neumann, Robert
Author_Institution :
Siemens Res. Labs., Munich, West Germany
Abstract :
The peak/valley current ratio, of AlGaAs/GaAs double barrier resonant tunnelling diodes at room temperature is found to be very sensitive to the quality of the GaAs/AlGaAs interface, while the AlGaAs/GaAs interface is much less critical.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; p-n heterojunctions; tunnel diodes; vapour phase epitaxial growth; AlGaAs-GaAs; III-V semiconductors; MOVPE; double barrier; metalorganic vapour phase epitaxy; nonequivalent heterointerfaces; peak/valley current ratio; resonant tunnelling diodes; room temperature;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19891143
