• DocumentCode
    845961
  • Title

    Nonequivalent heterointerfaces in AlGaAs/GaAs double barrier resonant tunnelling diodes grown by metalorganic vapour phase epitaxy

  • Author

    Tews, H. ; Schnell, R.D. ; Neumann, Robert

  • Author_Institution
    Siemens Res. Labs., Munich, West Germany
  • Volume
    25
  • Issue
    25
  • fYear
    1989
  • Firstpage
    1709
  • Lastpage
    1711
  • Abstract
    The peak/valley current ratio, of AlGaAs/GaAs double barrier resonant tunnelling diodes at room temperature is found to be very sensitive to the quality of the GaAs/AlGaAs interface, while the AlGaAs/GaAs interface is much less critical.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; p-n heterojunctions; tunnel diodes; vapour phase epitaxial growth; AlGaAs-GaAs; III-V semiconductors; MOVPE; double barrier; metalorganic vapour phase epitaxy; nonequivalent heterointerfaces; peak/valley current ratio; resonant tunnelling diodes; room temperature;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19891143
  • Filename
    41982
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=845961