Title :
L-band LDMOS power amplifiers based on an inverse class-F architecture
Author :
Lépine, Fabien ; Ådahl, Andreas ; Zirath, Herbert
Author_Institution :
Microwave Electron. Lab., Chalmers Univ. of Technol., Gothenburg, Sweden
fDate :
6/1/2005 12:00:00 AM
Abstract :
Two inverse class-F power amplifiers (PAs) working at 1 and 1.8 GHz, respectively, have been developed. The PAs use an LDMOS transistor as an active element in order to generated high efficiency with high output power. The 1-GHz PA achieved a drain efficiency of 77.8% with 12.4 W of output power and the 1.8-GHz PA a drain efficiency of 60% with 13 W of output power. To our knowledge, these results represent the highest efficiency and output power for an inverse class-F PA based on a single LDMOS transistor working at these frequencies.
Keywords :
MOSFET; UHF integrated circuits; UHF power amplifiers; 1 GHz; 1.8 GHz; 12.4 W; 13 W; L-band LDMOS power amplifiers; LDMOS transistor; drain efficiency; inverse class-F architecture; inverse class-F power amplifiers; quadrature phase-shift keying; Costs; High power amplifiers; Linearity; Phase shift keying; Power amplifiers; Power generation; Quadrature phase shift keying; Radio frequency; Radiofrequency amplifiers; Voltage; Class E; LDMOS; class F; high efficiency; inverse class F; power amplifier (PA); quadrature phase-shift keying (QPSK);
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2005.848830
