Title :
Low-threshold, high-power, single-longitudinal-mode operation i 1.5 μm multiple-quantum-well, distributed-feedback laser diodes
Author :
Kitamura, Masayuki ; Sasaki, T. ; Takano, Shigeru ; Yamada, Hiroyoshi ; Hasumi, H. ; Mito, I.
Author_Institution :
Opto-Electron. Res. Labs., NEC Corp., Kawasaki
fDate :
11/10/1988 12:00:00 AM
Abstract :
Extremely low-threshold, single-longitudinal-mode operation is reported for 1.5 μm band GaInAs multiple quantum well, distributed feedback laser diodes. A 5.5 mA minimum threshold current as well as 40 mW maximum light output power and 0.33 W/A maximum quantum efficiency have been attained under CW condition at room temperature
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; laser modes; laser transitions; optical communication equipment; semiconductor junction lasers; 1.5 micron; 40 mW; 5.5 mA; CW condition; DFB laser; GaInAs; III-V semiconductors; MQW; distributed-feedback laser; high-power; laser diodes; low-threshold; maximum light output power; minimum threshold current; multiple-quantum-well; optical communication; quantum efficiency; room temperature; semiconductor lasers; single-longitudinal-mode;
Journal_Title :
Electronics Letters
