DocumentCode :
846303
Title :
Compact Empirical Modeling of Nonlinear Dynamic Thermal Effects in Electron Devices
Author :
Melczarsky, Ilan ; Lonac, Julio Andrés ; Filicori, Fabio ; Santarelli, Alberto
Author_Institution :
Dipt. di Ing. Elettron., Univ. of Bologna, Bologna
Volume :
56
Issue :
9
fYear :
2008
fDate :
9/1/2008 12:00:00 AM
Firstpage :
2017
Lastpage :
2024
Abstract :
An original empirical approach to deal with nonlinear dynamic thermal effects in electron devices is proposed. The new technology-independent approach is very compact and easy to implement in computer-aided design tools. Therefore, it can be easily coupled with electrical device models in order to obtain accurate electrothermal models that are suitable for nonconstant-envelope RF applications (e.g., pulsed radar). Model equations and identification procedures are derived in this paper. Validation results and comparison with simplified models are also presented both for a simulated field-effect transistor device, as well as for a real hetero- junction bipolar transistor device.
Keywords :
Volterra series; heterojunction bipolar transistors; microwave field effect transistors; semiconductor device models; Volterra series; compact empirical modeling; electron devices; electrothermal models; heterojunction bipolar transistor device; microwave field-effect transistors; nonlinear dynamic thermal effects; simulated field-effect transistor device; thermal impedance; Behavioral modeling; Volterra series; electrothermal; electrothermal effects; heterojunction bipolar transistors (HBTs); intermodulation distortion; microwave field-effect transistors (FETs); modeling; nonlinear; self-heating; semiconductor device thermal factors; thermal; thermal impedance;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/TMTT.2008.2001956
Filename :
4608716
Link To Document :
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