Title :
Carbon nanotubes vacuum field emission differential amplifier integrated circuits
Author :
Kang, W.P. ; Wong, Y.M. ; Davidson, J.L. ; Kerns, D.V. ; Choi, B.K. ; Huang, J.H. ; Galloway, K.F.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Vanderbilt Univ., Nashville, TN, USA
Abstract :
A novel vacuum field emission differential amplifier integrated circuit (VFE diff-amp IC) utilising carbon nanotube (CNT) emitters is presented. A dual-mask microfabrication process is employed to achieve the VFE diff-amp IC by integrating identical CNT VFE transistors with built-in split gates and anodes. The pair of integrated amplifiers shows low gate turn-on voltage, large DC gain, a reasonable transconductance, and a good common-mode rejection ratio. The approach demonstrates a new way for development of temperature- and radiation-tolerant VFE integrated microelectronics.
Keywords :
carbon nanotubes; differential amplifiers; electron field emission; monolithic integrated circuits; nanotube devices; vacuum microelectronics; CNT VFE transistors; VFE diff-amp IC; built-in split gates; carbon nanotube emitters; common-mode rejection ratio; dual-mask micro fabrication process; integrated amplifiers; large DC gain; low gate turn-on voltage; radiation-tolerant VFE integrated microelectronics; temperature-tolerant VFE integrated microelectronics; transconductance; vacuum field emission differential amplifier integrated circuits;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20064239
