DocumentCode
846389
Title
High-reflectivity AlGaInAs/InP multilayer mirrors grown by low-pressure MOVPE for application to long-wavelength high-contrast-ratio multi-quantum-well modulators
Author
Moseley, A.J. ; Thompson, J. ; Robbins, D.J. ; Kearley, M.Q.
Author_Institution
Plessey Res. Caswell Ltd., Towcester, UK
Volume
25
Issue
25
fYear
1989
Firstpage
1717
Lastpage
1718
Abstract
The authors reports the first high-reflectivity multilayer dielectric mirrors fabricated from MOVPE-grown AlGaInAs/InP for long-wavelength operation. Mirrors have been fabricated from 40-layer structures using 1.3 mu m composition AlGaInAs which exhibit reflectivities as high as 95% in the wavelength range 1.55-1.7 mu m.
Keywords
III-V semiconductors; aluminium compounds; electro-optical devices; gallium arsenide; indium compounds; mirrors; optical modulation; semiconductor growth; semiconductor quantum wells; vapour phase epitaxial growth; 1.3 micron; 1.55 to 1.7 micron; 40-layer structures; AlGaInAs-InP; III-V semiconductors; MQW type; high-contrast-ratio; high-reflectivity; long-wavelength operation; low-pressure MOVPE; multi-quantum-well; multilayer dielectric mirrors; multilayer mirrors; multiquantum well modulators;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19891148
Filename
41987
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