Title :
Low threshold current 1.3 mu m GaInAsP lasers grown on GaAs substrates
Author :
Omura, E. ; Uesugi, Hideyuki ; Kimura, Tomohiro ; Namizaki, H.
Author_Institution :
Mitsubishi Electr. Corp., Hyogo, Japan
Abstract :
A CW threshold current of 31 mA at room temperature has been realised in 1.3 mu m GaInAsP diode lasers grown on GaAs substrates by the metalorganic chemical vapour deposition technique. A comparison of characteristics of InP- and GaAs-substrate lasers is given.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser transitions; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 1.3 micron; 31 mA; CW threshold current; GaAs substrates; GaInAsP-InP-GaAs; MOCVD; metalorganic chemical vapour deposition; room temperature; semiconductor lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19891149
