DocumentCode
846467
Title
Novel multimode J-pHEMT front-end architecture with power-control scheme for maximum efficiency
Author
Clifton, John Christopher ; Albasha, Lutfi ; Lawrenson, Alan ; Eaton, Anthony M.
Author_Institution
Sony Semicond. & Electron. Solutions, Basingstoke, UK
Volume
53
Issue
6
fYear
2005
fDate
6/1/2005 12:00:00 AM
Firstpage
2251
Lastpage
2258
Abstract
Based upon a unique junction pseudomorphic high electron-mobility transistor (J-pHEMT) device, a novel method of providing high-efficiency power amplifier (PA) power control for variable envelope modulation schemes is demonstrated for enhanced data rates for global system for mobile communications evolution and wide-band code division multiple access. This new technique, based upon the use of a linear PA, was extended to provide a simple, but highly effective method of PA efficiency enhancement based upon dynamic adaptive bias control. Together, the architecture allows for substantially higher efficiency levels compared with conventional linear solutions over the entire range of handset operating conditions, while avoiding the necessity for complex control loops and linearization schemes. Furthermore, it is shown that the characteristics of the J-pHEMT, when used with this architecture, can be exploited to facilitate an efficient and completely novel single-chip PA plus antenna switch to substantially reduce the RF complexity of a cellular handset.
Keywords
3G mobile communication; HEMT integrated circuits; MMIC power amplifiers; cellular radio; data communication; mobile handsets; power control; EDGE; GSM; J-pHEMT device; RF complexity; cellular handset; dynamic adaptive bias control; envelope tracking; handset operating condition; junction pseudomorphic high electron-mobility transistor; linear power amplifier; mobile communications; monolithic microwave integrated circuit; multimode J-pHEMT front-end architecture; power control scheme; variable envelope modulation; wide-band code division multiple access; Broadband amplifiers; GSM; High power amplifiers; Modulation coding; Multiaccess communication; PHEMTs; Power control; Switches; Telephone sets; Transistors; Adaptive bias control; enhanced data rates for global system for mobile communications (GSM) evolution (EDGE); envelope tracking; monolithic microwave integrated circuit (MMIC) power amplifiers (PAs); power control; pseudomorphic high electron-mobility transistor (pHEMT);
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.2005.848747
Filename
1440747
Link To Document