Title :
Control of gate leakage in AlInAs-insulator HIGFETs
Author :
Newson, D.J. ; Merrett, R.P. ; Lee, Minhung ; Scott, E.G.
Author_Institution :
British Telecom Res. Labs., Ipswich, UK
Abstract :
By proper optimisation of the channel, the gate leakage of 1 mu m gate-length GaInAs HIGFETs has been reduced to below 10 nA/mm. This has been achieved in a delta-doped structure in which Zener tunnelling is inoperative.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; insulated gate field effect transistors; semiconductor doping; 1 micron; GaInAs-AlInAs; HIGFETs; Zener tunnelling; channel; delta-doped structure; gate leakage; optimisation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19891156
