DocumentCode
846502
Title
Very low threshold current density GaInAs/AlGaInAs MQW lasers made by phosphorus-free MBE and operating in 1.5-1.6 mu m range
Author
Quillec, M. ; Allovon, M. ; Brillouet, F. ; Praseuth, J.P. ; Sermage, B.
Author_Institution
CNET, Lab. de Bagneux, France
Volume
25
Issue
25
fYear
1989
Firstpage
1731
Lastpage
1732
Abstract
Multiquantum-well lasers have been fabricated by molecular beam epitaxy (MBE) in the ´phosphorus-free´ AlGaInAs/GaInAs system. For the first time, very low current densities were obtained: 940 A/cm2 for a 800 mu m-long device at 1.58 mu m. The structures used a quaternary alloy for the buffer layer and the quantum well barriers; the best result was obtained from a graded-index waveguide separate-confinement heterostructure.
Keywords
aluminium compounds; gallium arsenide; indium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; semiconductor junction lasers; semiconductor quantum wells; 1.5 to 1.6 micron; 800 micron; GaInAs-AlGaInAs; MQW lasers; buffer layer; graded-index waveguide separate-confinement heterostructure; molecular beam epitaxy; quantum well barriers; quaternary alloy; threshold current density;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19891158
Filename
41997
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