Title :
A mobility model including the screening effect in MOS inversion layer
Author :
Shirahata, Masayoshi ; Kusano, Hiromi ; Kotani, Norihiko ; Kusanoki, Shigeru ; Akasaka, Yoichi
Author_Institution :
Mitsubishi Electric Corp., Hyugo, Japan
fDate :
9/1/1992 12:00:00 AM
Abstract :
A mobility model for MOSFET device simulation is proposed. The model is not only applicable to both inversion layer and source/drain high concentration regions of a MOSFET, but it also takes into account the screening effect in the inversion layer. The model also includes an improved normal-field dependence for thin gate oxide MOSFETs. The low parallel electric field mobility is estimated by adding mobilities due to donor scattering, acceptor scattering and lattice scattering using Matthiesen´s rule. Mobilities due to both the donor and the acceptor scattering include the electron screening effect. The mobility due to lattice scattering is formed as a function of normal electric field En, including the strong dependence term of E n, to express surface roughness scattering. Calculation results of the device simulation using the mobility model show good agreement with the experimental data for various channel dopings
Keywords :
carrier mobility; doping profiles; insulated gate field effect transistors; inversion layers; semiconductor device models; MOS inversion layer; MOSFET device simulation; Matthiesen´s rule; acceptor scattering; channel dopings; donor scattering; electron screening effect; lattice scattering; mobility model; normal-field dependence; parallel electric field mobility; screening effect; source/drain high concentration regions; surface roughness scattering; Computational modeling; Computer simulation; Design automation; Doping; Impurities; Lattices; MOSFET circuits; Predictive models; Scattering; Semiconductor process modeling;
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
