Title :
Temperature Sensing Scheme Through Random Telegraph Noise in Contact RRAM
Author :
Chang, Liang-Shun ; Huang, Chien-Yuan ; Tseng, Yuan-Heng ; King, Ya-Chin ; Lin, Chrong-Jung
Author_Institution :
Microelectron. Lab., Nat. Tsing Hua Univ., Hsinchu, Taiwan
Abstract :
A novel contact resistive random access memory (CRRAM) device based a temperature sensor is proposed and investigated in this letter. By establishing the relationship between CRRAM´s random telegraph noise (RTN) signal and temperature, a new temperature sensing scheme is demonstrated for the first time. With a simple comparator circuit, a digital output temperature sensor is successfully implemented based on the temperature-dependent RTN signal. The new sensing scheme is very suitable to low-power low-speed sensor modules.
Keywords :
comparators (circuits); low-power electronics; random noise; random-access storage; temperature measurement; temperature sensors; CRRAM RTN signal; comparator circuit; contact RRAM device; contact resistive random access memory device; digital output temperature sensor; low-power low-speed sensor modules; random telegraph noise; temperature sensing scheme; temperature-dependent RTN signal; Charge carrier processes; Noise; Temperature dependence; Temperature measurement; Temperature sensors; Wireless sensor networks; Contact resistive random access memory (CRRAM); random telegraph noise (RTN); temperature sensor;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2012.2226137
