Title :
Non-volatile Al2O3 memory using an Al-rich structure as a charge-storing layer
Author :
Nakata, S. ; Saito, K. ; Shimada, M.
Author_Institution :
NTT Microsyst. Integration Labs., Kanagawa, Japan
fDate :
6/9/2005 12:00:00 AM
Abstract :
The memory characteristics of a new non-volatile Al2O3 memory deposited by electron-cyclotron-resonance sputtering are described. Al-rich Al2O3 was fabricated at a reduced oxygen gas flow rate. Capacitance-voltage characteristics show a large hysteresis window owing to the Al-rich structure. This memory will stay non-volatile for several years or more.
Keywords :
alumina; cyclotron resonance; random-access storage; sputtered coatings; Al2O3; capacitance-voltage characteristics; charge-storing layer; electron-cyclotron-resonance sputtering; nonvolatile memory; reduced oxygen gas flow rate;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20051419
