Title :
1/f Noise in Carbon Nanotube Devices—On the Impact of Contacts and Device Geometry
Author :
Appenzeller, Joerg ; Lin, Yu-Ming ; Knoch, Joachim ; Chen, Zhihong ; Avouris, Phaedon
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY
fDate :
5/1/2007 12:00:00 AM
Abstract :
We report on the 1/f noise in various ballistic carbon nanotube devices. A common means to characterize the quality of a transistor in terms of noise is to evaluate the ratio of the noise amplitude A and the sample resistance R. By contacting semiconducting tubes with different metal electrodes we are able to show that a small A/R value by itself is no indication of a suitable metal/tube combination for logic applications. We discuss how current in a nanotube transistor is determined by the injection of carriers at the electrode/nanotube interface, while at the same time excess noise is related to the number of carriers inside the nanotube channel. In addition, we demonstrate a substantial reduction in noise amplitude for a tube transistor with multiple carbon nanotubes in parallel
Keywords :
1/f noise; ballistic transport; carbon nanotubes; electrodes; field effect transistors; interface phenomena; nanotube devices; semiconductor nanotubes; 1/f noise; C; ballistic carbon nanotube devices; carrier injection; device geometry; electrode-nanotube interface; field effect transistors; metal electrodes; nanotube transistor; semiconducting tubes; Carbon nanotubes; Contact resistance; Electrodes; Geometry; Logic; Noise level; Noise reduction; Semiconductivity; Semiconductor device noise; Signal to noise ratio; 1/f noise; Carbon nanotube; field-effect transistor;
Journal_Title :
Nanotechnology, IEEE Transactions on
DOI :
10.1109/TNANO.2007.892052
