Title :
Continuously tunable 1.5 μm multiple-quantum-well GaInAs/GaInAsP distributed-Bragg-reflector lasers
Author :
Koch, T.L. ; Koren, U. ; Gnall, R.P. ; Burrus, C.A. ; Miller, B.I.
Author_Institution :
AT&T Bell Labs., Holmdel, NJ
fDate :
11/10/1988 12:00:00 AM
Abstract :
The authors demonstrate improved performance in tunable distributed-Bragg-reflector lasers using GaInAs/GaInAsP multiple-quantum-well active layers. They observe linewidths as low as 1.9 MHz, differential quantum efficiencies as large as 33%/front facet at 1.5 μm, and rapid electronic access to all frequencies throughout a 1000 GHz range
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; gallium compounds; indium compounds; integrated optics; laser transitions; laser tuning; semiconductor junction lasers; 1 THz; 1.5 micron; 1.9 MHz; 33 percent; DBR laser; GaInAs-GaInAsP; MQW active layers; continuously tunable type; differential quantum efficiencies; distributed-Bragg-reflector lasers; multiple-quantum-well; semiconductor lasers;
Journal_Title :
Electronics Letters
