Interface magnetic properties of epitaxial Fe-InAs heterostructures

Author

Xu, Y.B. ; Tselepi, M. ; Wu, J. ; Wang, S. ; Bland, J.A.C. ; Huttel, Y. ; van der Laan, G.

Author_Institution

Dept. of Electron., Fudan Univ., Shanghai, China

Volume

38

Issue

5

fYear

2002

fDate

9/1/2002 12:00:00 AM

Firstpage

2652

Lastpage

2654

Abstract

The growth and interface magnetic properties of epitaxial Fe films grown on InAs [100]-4×2 have been studied using low-energy electron diffraction, in situ magneto-optical Kerr effect, and X-ray magnetic circular dichroism. The magnetic properties at room temperature were found to proceed via three phases with thickness; a nonmagnetic phase, a superparamagnetic phase, and a ferromagnetic phase. The initial ferromagnetic phase might be stabilized by interparticle interactions. The films show bulk-like spin moments of 1.90 ± 0.15 μ_B with the thickness above about 20 ML and a large enhancement ∼ 260% of the ratio of orbital versus spin moment in the ultrathin region.

Keywords

III-V semiconductors; Kerr magneto-optical effect; ferromagnetic materials; indium compounds; interface magnetism; iron; low energy electron diffraction; magnetic circular dichroism; magnetic epitaxial layers; magnetic moments; narrow band gap semiconductors; semiconductor-metal boundaries; superparamagnetism; Fe-InAs; InAs[100] substrate; X-ray magnetic circular dichroism; epitaxial Fe ultrathin film; ferromagnetic metal/semiconductor heterostructure; ferromagnetic phase; growth; interface magnetic properties; low energy electron diffraction; magneto-optical Kerr effect; nonmagnetic phase; orbital moment; spin electronics; spin moment; superparamagnetic phase; Electrons; Iron; Kerr effect; Laboratories; Magnetic films; Magnetic properties; Magnetooptic effects; Plasma temperature; Substrates; X-ray diffraction;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.2002.801981

Filename

1042303