DocumentCode :
847133
Title :
Experimental Study on Breakdown of Mobility Universality in 
-Directed (110)-Oriented pMOSFETs
Author :
Shimizu, Ken ; Tsutsui, Gen ; Januar, Doni ; Saraya, Takuya ; Hiramoto, Toshiro
Author_Institution :
Inst. of Ind. Sci. & the Collaborative Inst. of Nano Quantum Inf. Electron., Univ. of Tokyo, Meguro
Volume :
6
Issue :
3
fYear :
2007
fDate :
5/1/2007 12:00:00 AM
Firstpage :
358
Lastpage :
361
Abstract :
This paper describes experimental determination of the value of eta in (110)-oriented SOI pMOSFETs by changing the SOI thickness and temperature. It is found for the first time that in the case of a lang100rang-directed channel, eta should be larger than unity, which implies the collapse of the mobility universality, when temperature is low or SOI thickness is ultimately thin. Possible mechanisms of the breakdown of the mobility universality are discussed
Keywords :
MOSFET; electric breakdown; hole mobility; silicon-on-insulator; (110)-oriented pMOSFETs; SOI pMOSFET; directed channel; hole mobility; mobility universality breakdown; CMOS technology; Educational programs; Educational technology; Electric breakdown; MOSFET circuits; Nanoelectronics; Particle scattering; Permittivity; Silicon; Temperature; Fully depleted SOI MOSFET; inversion layer mobility;
fLanguage :
English
Journal_Title :
Nanotechnology, IEEE Transactions on
Publisher :
ieee
ISSN :
1536-125X
Type :
jour
DOI :
10.1109/TNANO.2007.894556
Filename :
4200737
Link To Document :
