Noise Characteristics of ZnO-Nanowire Photodetectors Prepared on ZnO:Ga/Glass Templates

Author

Lu, Chien-Yuan ; Chang, Sheng-Po ; Chang, Shoou-Jinn ; Chiou, Yu-Zung ; Kuo, Che-Fu ; Chang, Hong-Ming ; Hsu, Cheng-Liang ; Chen, I-Cherng

Author_Institution

Nat. Cheng Kung Univ., Tainan

Volume

7

Issue

7

fYear

2007

fDate

7/1/2007 12:00:00 AM

Firstpage

1020

Lastpage

1024

Abstract

In this paper, we report the fabrication of vertically well-aligned ZnO nanowire ultraviolet (UV) photodetectors on ZnO:Ga/glass templates. With 1 V applied bias, it was found that dark current density of the device was only 1.37times10^-7 A/cm². It was also found that UV-to-visible rejection ratio of the fabricated photodetector was around 1000 with a maximum quantum efficiency of 12.6%. It was also found that noise equivalent power and normalized detectivity of the ZnO nanowire photodetector were 5.73times10^-11 W and 6.17times10⁹ cmHz^0.5W^-1, respectively.

Keywords

gallium; nanowires; photodetectors; semiconductor device noise; semiconductor quantum wires; ultraviolet detectors; zinc compounds; UV-to-visible rejection ratio; ZnO - Interface; dark current density; nanowire ultraviolet photodetectors; noise equivalent power; normalized detectivity; quantum efficiency; Chemical vapor deposition; Glass; Nanoscale devices; Optical films; Optoelectronic devices; Photodetectors; Semiconductor device noise; Substrates; Temperature; Zinc oxide; Detectivity; ZnO; nanowires; noise equivalent power (NEP); quantum efficiency; vapor-liquid-solid (VLS);

fLanguage

English

Journal_Title

Sensors Journal, IEEE

Publisher

ieee

ISSN

1530-437X

Type

jour

DOI

10.1109/JSEN.2007.896567

Filename

4200742