Twin Thin-Film Transistor Nonvolatile Memory With an Indium–Gallium–Zinc–Oxide Floating Gate

Author

Hung, Min-Feng ; Wu, Yung-Chun ; Chang, Jiun-Jye ; Chang-Liao, Kuei-Shu

Author_Institution

Dept. of Eng. & Syst. Sci., Nat. Tsing Hua Univ., Hsinchu, Taiwan

Volume

34

Issue

1

fYear

2013

fDate

Jan. 2013

Firstpage

75

Lastpage

77

Abstract

A polycrystalline silicon (poly-Si) channel twin thin-film transistor (twin-TFT) nonvolatile memory (NVM) device with In-Ga-Zn-Ox (IGZO) as a storage layer is demonstrated. IGZO-FG twin-TFT NVM exhibits a large memory window ΔV_th. A V_CG at 18 V for 10 ms can achieve 5.6 V of ΔV_th. An extrapolation of the memory window to ten years demonstrates that the stored charge still remains 65% of its initial value. Coupling ratio effect and gate length effect are discussed in detail. Such a low-temperature IGZO-FG twin-TFT NVM device is feasible for integration in IGZO-based display circuits for system-on-panel applications.

Keywords

elemental semiconductors; extrapolation; gallium; indium; random-access storage; silicon; thin film transistors; zinc; IGZO-based display circuits; In-Ga-Zn-O_x; Si; coupling ratio effect; gate length effect; indium-gallium-zinc-oxide floating gate; low-temperature IGZO-FG twin-TFT NVM device; memory window extrapolation; polycrystalline silicon channel; storage layer; system-on-panel applications; time 10 ms; twin thin-film transistor nonvolatile memory; voltage 18 V; voltage 5.6 V; Fabrication; Junctions; Logic gates; Nonvolatile memory; Thin film transistors; Tunneling; Indium–gallium–zinc–oxide (IGZO); nonvolatile memory (NVM); planar; twin thin-film transistor (twin-TFT);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2012.2226232

Filename

6374644