• DocumentCode
    847365
  • Title

    DC characteristics and stability behaviour of high-speed Si/SiGe HBTs with undoped SiGe spacer between base and collector

  • Author

    Schreiber, H.-U. ; Albers, J.N.

  • Author_Institution
    Ruhr Univ. Bochum, Germany
  • Volume
    28
  • Issue
    13
  • fYear
    1992
  • fDate
    6/18/1992 12:00:00 AM
  • Firstpage
    1187
  • Lastpage
    1188
  • Abstract
    The quality of MBE-grown Si/SiGe heterojunction bipolar transistors (HBTs) was improved by inserting a well-defined undoped SiGe layer between the neutral base and the collector. The DC characteristics and the long-term stability of these non-selfaligned devices proved to be excellent, and the transit frequency reached 33 GHz (VCB=1 V). Those features are essential preconditions for future application in high-speed ICs.
  • Keywords
    Ge-Si alloys; elemental semiconductors; heterojunction bipolar transistors; semiconductor device testing; semiconductor materials; silicon; stability; 33 GHz; DC characteristics; MBE; Si-SiGe; heterojunction bipolar transistors; high speed HBT; nonselfaligned devices; stability; transit frequency; undoped SiGe spacer;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19920750
  • Filename
    144326
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=847365