Title :
Multiplanar silicon doping of GaAs using disilane by GSMBE
Author :
Sandhu, A. ; Yamaura, Shingo ; Okamoto, N. ; Ando, Hideki ; Fujii, Teruya
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
fDate :
6/18/1992 12:00:00 AM
Abstract :
Silicon multiplanar doping was employed to improve the disilane doping efficiency during the growth of GaAs by GSMBE using triethylgallium and arsine as matrix element sources. The doping efficiency was 100% for Si planar separations ( delta s) of 10 nm or greater. A maximum carrier concentration of 7.5*1018 cm-3 was achieved at delta s=5 nm.
Keywords :
III-V semiconductors; carrier density; chemical beam epitaxial growth; gallium arsenide; semiconductor doping; semiconductor growth; silicon; GSMBE; GaAs:Si; Si 2H 6; disilane; doping efficiency; gas source MBE; maximum carrier concentration; multiplanar doping; triethylgallium;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920751
