• DocumentCode
    847375
  • Title

    Multiplanar silicon doping of GaAs using disilane by GSMBE

  • Author

    Sandhu, A. ; Yamaura, Shingo ; Okamoto, N. ; Ando, Hideki ; Fujii, Teruya

  • Author_Institution
    Fujitsu Labs. Ltd., Atsugi, Japan
  • Volume
    28
  • Issue
    13
  • fYear
    1992
  • fDate
    6/18/1992 12:00:00 AM
  • Firstpage
    1188
  • Lastpage
    1190
  • Abstract
    Silicon multiplanar doping was employed to improve the disilane doping efficiency during the growth of GaAs by GSMBE using triethylgallium and arsine as matrix element sources. The doping efficiency was 100% for Si planar separations ( delta s) of 10 nm or greater. A maximum carrier concentration of 7.5*1018 cm-3 was achieved at delta s=5 nm.
  • Keywords
    III-V semiconductors; carrier density; chemical beam epitaxial growth; gallium arsenide; semiconductor doping; semiconductor growth; silicon; GSMBE; GaAs:Si; Si 2H 6; disilane; doping efficiency; gas source MBE; maximum carrier concentration; multiplanar doping; triethylgallium;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19920751
  • Filename
    144327
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=847375