DocumentCode
84739
Title
A 2.5-GHz Receiver Front-End With
-Boosted Post-LNA
-Path Filtering in 40-nm CMOS
Author
Ostman, Kim B. ; Englund, Mikko ; Viitala, Olli ; Kaltiokallio, M. ; Stadius, Kari ; Koli, Kimmo ; Ryynanen, Jussi
Author_Institution
Dept. of Micro & Nanosci., Aalto Univ., Aalto, Finland
Volume
62
Issue
9
fYear
2014
fDate
Sept. 2014
Firstpage
2071
Lastpage
2083
Abstract
This paper presents the analysis, design, and measurements of a 2.5-GHz receiver front-end in a 40-nm CMOS technology. The front-end utilizes RLC-resonator quality factor (Q) boosting and four-phase N-path filtering to improve the blocker filtering capabilities of the low-noise amplifier (LNA). Systematic analysis is performed in order to obtain a thorough design approach. Particular attention is paid to the passive mixer switches in the RLC case, for which we show that minimum switch resistance does not provide best noise figure (NF), nor best relative blocker attenuation. Moreover, the N-path filter extends the stable operating region of a Q-boosted LNA, and adding a noisy Q-boosting circuit can actually improve the receiver NF in practical realizations. The experimental CMOS front-end is flip-chip packaged, and a parasitic-aware input matching method for the electrostatic-discharge-protected LNA is proposed, analyzed, and verified. In nominal operation, the programmable front-end achieves a measured gain of 39 dB, an NF of 3.5 dB, and an out-of-band input-referred third order intercept point of > 0 dBm, while consuming 48 mA from a 1.1-V supply.
Keywords
CMOS integrated circuits; MMIC amplifiers; Q-factor; UHF amplifiers; field effect MMIC; flip-chip devices; low noise amplifiers; microwave receivers; radio receivers; CMOS front-end; Q-boosted post-LNA N-path filtering; Q-boosting circuit; RLC-resonator quality factor boosting; current 48 mA; electrostatic-discharge-protected LNA; flip-chip packaged; frequency 2.5 GHz; gain 39 dB; low-noise amplifier; noise figure; noise figure 3.5 dB; passive mixer switches; programmable front-end; receiver front-end; size 40 nm; voltage 1.1 V; Gain; Impedance; Load modeling; Mixers; Radio frequency; Receivers; Resistance; $N$ -path filtering; Circuit optimization; front-end; low-noise amplifier (LNA); narrowband operation; negative conductance; quality factor; receiver; stability;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.2014.2333714
Filename
6850079
Link To Document