Title :
Investigation of high In content InGaAs quantum wells grown on GaAs by molecular beam epitaxy
Author :
Lord, S.M. ; Pezeshki, B. ; Harris, J.S.
Author_Institution :
Stanford Univ., CA, USA
fDate :
6/18/1992 12:00:00 AM
Abstract :
Excitonic resonances and the quantum confined Stark effect are observed near 1.3 mu m in InGaAs quantum wells grown on GaAs using a slowly graded InGaAs buffer. The pin structure performs as a modulator with a relative transmission modulation of 12% at 1.3 mu m and as a low leakage photodetector.
Keywords :
III-V semiconductors; Stark effect; electro-optical devices; gallium arsenide; indium compounds; infrared detectors; infrared spectra of inorganic solids; molecular beam epitaxial growth; optical modulation; photodetectors; semiconductor growth; semiconductor quantum wells; 1.3 micron; InGaAs-GaAs quantum wells; excitonic resonances; low leakage photodetector; modulator; molecular beam epitaxy; p-i-n structure; quantum confined Stark effect; relative transmission modulation; slowly graded InGaAs buffer;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920754
