Title :
Performance dependence of InGaAs MSM photodetectors on barrier-enhancement layer structures
Author :
Sano, Eiichi ; Yoneyama, Mitsuru ; Enoki, Tsutomu ; Tamamura, T.
Author_Institution :
NTT LSI Labs., Atsugi, Japan
fDate :
6/18/1992 12:00:00 AM
Abstract :
The advantage of the graded superlattice layer over the abrupt junction is demonstrated for the continuous wave (CW) and pulse responses of InGaAs metal-semiconductor-metal photodetectors (MSM PDs). The measured pulsewidth of 44 ps for the 0.75 mu m MSM PD with the graded superlattice layer when corrected for the measurement system bandwidth implies an impulse response of 22 ps.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; metal-semiconductor-metal structures; photodetectors; semiconductor superlattices; 0.75 micron; 22 ps; InGaAs; MSM photodetectors; abrupt junction; barrier-enhancement layer structures; graded superlattice layer; metal-semiconductor-metal; pulse responses;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920770
