Title :
Fabrication of low threshold voltage microlasers
Author :
Scherer, Axel ; Jewell, J.L. ; Walther, M. ; Harbison, J.P. ; Florez, L.T.
Author_Institution :
Bellcore, Red Bank, NJ, USA
fDate :
6/18/1992 12:00:00 AM
Abstract :
Vertical cavity surface emitting lasers (VCSELs) with threshold voltages of 1.7 V and light emission at 850 nm have been fabricated. The resistance-area product in these new vertical cavity lasers is comparable to that of edge-emitting lasers, and threshold currents as low as 3mA have been measured. Molecular beam epitaxy was used to grow n-type mirrors, a quantum well active region, and a heavily Be-doped p-contact. After contact definition and alloying, passive high-reflectivity mirrors were deposited by reactive sputter deposition of SiO2-Si3N4 to complete the laser cavity.
Keywords :
laser cavity resonators; laser transitions; molecular beam epitaxial growth; optical workshop techniques; semiconductor junction lasers; sputter deposition; 1.7 V; 3 mA; 850 nm; MBE; SiO 2-Si 3N 4; alloying; contact definition; fabrication; heavily Be-doped p-contact; low threshold voltage; microlasers; n-type mirrors; passive high-reflectivity mirrors; quantum well active region; reactive sputter deposition; semiconductor lasers; surface emitting lasers; vertical cavity lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920773
