Title :
Electrical characteristics of MILC poly-Si TFTs with long Ni-offset structure
Author :
Kim, Gi-Bum ; Yoon, Yeo-Geon ; Kim, Min-Sun ; Jung, Hunjoon ; Lee, Seok-Woon ; Joo, Seung-Ki
Author_Institution :
Sch. of Mater. Sci. & Eng., Seoul Nat. Univ., South Korea
Abstract :
We have observed that B2H6-doped amorphous silicon (a-Si) showed a faster growth rate of metal-induced lateral crystallization (MILC) than that of undoped a-Si. From the analysis of the microstructure, it was thought that boron atoms could help modify the growth behavior from that of a branched crystal network to unidirectional crystal growth with few branches and that growth rate could to be enhanced. By using this good crystalline structure at the boundary region between the source/drain and channel, we have successfully fabricated p-type poly-Si thin-film transistors with good electrical properties with a MILC process.
Keywords :
annealing; boron; crystallisation; elemental semiconductors; nickel; semiconductor doping; silicon; thin film transistors; Ni; Si:B; active matrix liquid crystal devices; annealing; branched crystal network; dopants effect; electrical characteristics; intermetal layer; long Ni-offset structure; metal-induced lateral crystallization; p-type thin-film transistors; patterning; polysilicon TFT; source-drain boundary region; unidirectional crystal growth; Active matrix liquid crystal displays; Amorphous silicon; Crystal microstructure; Crystallization; Electric variables; Nickel; Optical microscopy; Plasma temperature; Sputtering; Thin film transistors;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2003.818154
