Title :
InGaP/GaAs/InGaP double heterostructure bipolar transistors with carbon-doped base grown by CBE
Author :
Chen, Y.K. ; Rapre, R. ; Tsang, W.T. ; Wu, Ming C.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
fDate :
6/18/1992 12:00:00 AM
Abstract :
Carbon-doped InGaP/GaAs/InGaP double heterostructure bipolar transistors with 25 AA setback layer are grown by chemical beam epitaxy. Transistors with nonalloyed base contacts show a very high common emitter current gain of 120 and very low collector saturation voltage of 75 mV at room temperature.
Keywords :
III-V semiconductors; carbon; chemical beam epitaxial growth; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; semiconductor growth; C doped bare; CBE; DHBT; HBT; InGaP-GaAs:C-InGaP; chemical beam epitaxy; double heterostructure bipolar transistors; high common emitter current gain; low collector saturation voltage; nonalloyed base contacts;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920775
