DocumentCode
847652
Title
InGaP/GaAs/InGaP double heterostructure bipolar transistors with carbon-doped base grown by CBE
Author
Chen, Y.K. ; Rapre, R. ; Tsang, W.T. ; Wu, Ming C.
Author_Institution
AT&T Bell Labs., Murray Hill, NJ, USA
Volume
28
Issue
13
fYear
1992
fDate
6/18/1992 12:00:00 AM
Firstpage
1228
Lastpage
1230
Abstract
Carbon-doped InGaP/GaAs/InGaP double heterostructure bipolar transistors with 25 AA setback layer are grown by chemical beam epitaxy. Transistors with nonalloyed base contacts show a very high common emitter current gain of 120 and very low collector saturation voltage of 75 mV at room temperature.
Keywords
III-V semiconductors; carbon; chemical beam epitaxial growth; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; semiconductor growth; C doped bare; CBE; DHBT; HBT; InGaP-GaAs:C-InGaP; chemical beam epitaxy; double heterostructure bipolar transistors; high common emitter current gain; low collector saturation voltage; nonalloyed base contacts;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19920775
Filename
144351
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