DocumentCode
847661
Title
High-frequency performance for sub-0.1 mu m gate InAs-inserted-channel InAlAs/InGaAs HEMT
Author
Akazaki, T. ; Enoki, Tsutomu ; Arai, Kenta ; Umeda, Yohtaro ; Ishii, Y.
Author_Institution
NTT LSI Labs., Kanagawa, Japan
Volume
28
Issue
13
fYear
1992
fDate
6/18/1992 12:00:00 AM
Firstpage
1230
Lastpage
1231
Abstract
The authors examine the high-frequency performance of a sub-0.1 mu m gate InAlAs/InGaAs HEMT with a thin InAs layer inserted into the InGaAs channel. The transconductance is 2.1 S/mm and the current-gain cutoff frequency is 264 GHz using a 0.08 mu m-long gate.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; solid-state microwave devices; 0.08 micron; 2.1 S; 264 GHz; HEMT; HF performance; InAlAs-InAs-InGaAs; InGaAs channel; channel inserted InAs layer; current-gain cutoff frequency; high-frequency performance; sub-0.1 mu m gate; submicron gate; transconductance;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19920776
Filename
144352
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