Title :
High power InGaAs/AlGaAs singlemode laser diodes suitable for pumping Pr3+-doped fluoride fibre optic amplifiers
Author :
Gignac, W.J. ; Major, J.S., Jr. ; Plano, W.E. ; Nam, D.W. ; Welch, D.F. ; Scifres, D.
Author_Institution :
Spectra Diode Labs., San Jose, CA, USA
fDate :
6/18/1992 12:00:00 AM
Abstract :
Performance characteristics are presented for high-power, singlemode, strained-layer InGaAs/AlGaAs quantum well separate confinement laser diodes. A maximum output power of 460 mW continuous wave with single transverse mode behaviour to 245 mW is achieved in the wavelength range 1020-1030 nm. These singlemode laser diodes have narrow far-field divergence, making them highly attractive as optical pumps for Pr3+-doped fluoride fibre optic amplifiers.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser modes; optical pumping; semiconductor junction lasers; 1020 to 1030 nm; 245 mW; 460 mW; InGaAs-AlGaAs; Pr 3+ doped fluoride glass; fibre optic amplifiers; high-power; narrow far-field divergence; optical pumps; quantum well; semiconductor lasers; separate confinement; single transverse mode; single-mode type; singlemode laser diodes; strained-layer;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920778
