DocumentCode
847689
Title
InGaAs-GaAs-InGaP channel guide strained quantum well lasers with output powers over 300 mW
Author
Sin, Y.K. ; Horikawa, H. ; Yamada, Koji ; Kamijoh, T.
Author_Institution
Semicond. Technol. Lab., OKI Electr. Ind. Co. Ltd., Tokyo, Japan
Volume
28
Issue
13
fYear
1992
fDate
6/18/1992 12:00:00 AM
Firstpage
1234
Lastpage
1235
Abstract
Device results are reported from channel guide InGaAs-GaAs strained quantum well lasers ( lambda L=980 nm) with In0.49Ga0.51P cladding layers. AR-HR coated channel guide lasers with a p-n-p InGaP current blocking junction on a p+-GaAs substrate show high output powers of 302 mW which is the highest output power obtained from InGaAs-GaAs-InGaP lasers.
Keywords
III-V semiconductors; antireflection coatings; gallium arsenide; gallium compounds; indium compounds; integrated optics; optical waveguides; semiconductor junction lasers; 302 mW; AR-HR coated; In 0.49Ga 0.51P cladding layers; InGaAs-GaAs-InGaP; antireflective facet; channel guide; highly-reflective facet; output powers; p-n-p InGaP current blocking junction; p +-GaAs substrate; semiconductor lasers; strained quantum well lasers;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19920779
Filename
144355
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