High-speed scaled-down self-aligned SEG SiGe HBTs

Author

Washio, Katsuyoshi ; Ohue, Eiji ; Hayami, Reiko ; Kodama, Akihiro ; Shimamoto, Hiromi ; Miura, Makoto ; Oda, Katsuya ; Suzumura, Isao ; Tominari, Tatsuya ; Hashimoto, Takashi

Author_Institution

Central Res. Lab., Hitachi Ltd., Tokyo, Japan

Volume

50

Issue

12

fYear

2003

Firstpage

2417

Lastpage

2424

Abstract

A scaled-down self-aligned selective-epitaxial-growth (SEG) SiGe HBT, structurally optimized for an emitter scaled down toward 100 nm, was developed. This SiGe HBT features a funnel-shaped emitter electrode and a narrow separation between the emitter and base electrodes. The first feature is effective for suppressing the increase of the emitter resistance, while the second one reduces the base resistance of the scaled-down emitter. The good current-voltage performance - a current gain of 500 for the SiGe HBT with an emitter area of 0.11 × 0.34 μm and V_BE standard deviation of less than 0.8 mV for emitter width down to about 0.13 μm - demonstrates the applicability of this SiGe HBT with a narrow emitter. This SiGe HBT demonstrated high-speed operation: an emitter-coupled logic (ECL) gate delay of 4.8 ps and a maximum operating frequency of 81 GHz for a static frequency divider.

Keywords

Ge-Si alloys; bipolar MIMIC; bipolar logic circuits; emitter-coupled logic; frequency dividers; heterojunction bipolar transistors; millimetre wave bipolar transistors; millimetre wave frequency convertors; vapour phase epitaxial growth; 81 GHz; SiGe; current-voltage performance; emitter-coupled logic gate delay; frequency conversion; funnel-shaped emitter electrode; high-speed scaled-down self-aligned HBT; input buffer; internal buffer; low-power applications; master-slave-T-type flip-flops; maximum operating frequency; millimeter wave bipolar integrated circuits; narrow electrodes separation; optical communication; output buffer; selective-epitaxial-growth HBT; static frequency divider; structurally optimized HBT; Bipolar integrated circuits; Electrodes; Frequency conversion; Germanium silicon alloys; Heterojunction bipolar transistors; Millimeter wave communication; Millimeter wave integrated circuits; Millimeter wave technology; Photonic integrated circuits; Silicon germanium;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2003.819259

Filename

1255604