DocumentCode :
847910
Title :
Investigation of hydrogen-sensing properties of Pd/AlGaAs-based Schottky diodes
Author :
Tsai, Yan-Ying ; Lin, Kun-Wei ; Lu, Chun-Tsen ; Chen, Huey-Ing ; Chuang, Hung-Ming ; Chen, Chun-Yuan ; Cheng, Chin-Chuan ; Liu, Wen-Chau
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Volume :
50
Issue :
12
fYear :
2003
Firstpage :
2532
Lastpage :
2539
Abstract :
The hydrogen response characteristics and sensing properties or catalytic Pd/Al0.3Ga0.7As metal-oxide-semiconductor (MOS) and metal-semiconductor (MS) Schottky diodes are systematically studied. The effects of hydrogen adsorption on device performances such as the current-voltage characteristics, sensitivity, barrier height variation, heat of adsorption, and transient response are investigated. The studied devices can be operated under very wide hydrogen concentration regimes with remarkable hydrogen-sensing properties. Particularly, at an extremely low hydrogen concentration of 15 ppm H2/air, both steady-state and transient responses at room temperature can be detected. In addition, under the presence of oxide layer in the studied MOS device, a larger change of barrier height and higher hydrogen response are observed. In addition, according to the van´t Hoff equation, the initial values of heat adsorption for Pd/semiconductor and Pd/oxide interface are calculated as 7.29 and 49.6 KJ/mole, respectively.
Keywords :
Fermi level; III-V semiconductors; Schottky diodes; aluminium compounds; catalysts; gallium arsenide; gas sensors; heat of adsorption; hydrogen; palladium; transient response; AES depth profiles; Fermi-level pinning; H; Pd; Pd-AlGaAs; Schottky diodes; barrier height variation; catalytic MOS diodes; catalytic metal-semiconductor diodes; current-voltage characteristics; device sensitivity; gas sensor; heat of adsorption; hydrogen adsorption; hydrogen-sensing properties; transient response; Current-voltage characteristics; Fabrication; Gallium arsenide; Hydrogen; Photonic band gap; Schottky diodes; Semiconductor materials; Steady-state; Temperature; Transient response;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2003.819656
Filename :
1255619
Link To Document :
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