• DocumentCode
    847940
  • Title

    Electrical and optical characterization of field emitter tips with integrated vertically stacked focus

  • Author

    Dvorson, L. ; Sha, G. ; Kymissis, I. ; Hong, C.-Y. ; Akinwande, A.I.

  • Author_Institution
    Microsystems Technol. Lab., MIT, Cambridge, MA, USA
  • Volume
    50
  • Issue
    12
  • fYear
    2003
  • Firstpage
    2548
  • Lastpage
    2558
  • Abstract
    A revised version of the authors´ BPM that includes quantitatively accurate closed-form expressions for the Fowler-Nordheim coefficients is summarized. For field emitter arrays with integrated focus with the gate and focus biased at the same potential (VG, = VF) the emission current was 100 nA/tip at 42 V, with about 50% intercepted by the focus. It was deduced that the tip radius of curvature is 2.4-3.6 nm. Analytical model, numerical simulation, and transmission electron microscopy micrographs all gave tip ROC values in this range. We studied electron beam collimation with lowering the focus voltage VF at different values of the gate voltage VG, and observed that the optimal VF is about 0.25 VG, confirming earlier predictions by the authors. From the measurements of beam collimation as a function of cathode-anode separation, we deduced the horizontal velocity of electrons. Under optimal collimation the estimated horizontal velocity was practically zero, and diameter of the spot size produced by a 5 × 5 array with a 40 × 40 μm footprint on the phosphor screen biased at 5 kV and located 15 mm away was at most 50 μm.
  • Keywords
    electron beam focusing; electron optics; elemental semiconductors; field emission displays; field emitter arrays; finite difference methods; silicon; transmission electron microscopy; tunnelling; Fowler-Nordheim coefficients; Si; accurate closed-form expressions; beam collimation; cathode-anode separation; electrical characterization; electron beam collimation; field emitter arrays; field emitter tips; horizontal velocity; integrated vertically stacked focus; numerical simulation; optical characterization; optimal collimation; revised BPM; tip radius-of-curvature; transmission electron microscopy; Analytical models; Closed-form solution; Collimators; Electron beams; Field emitter arrays; Integrated optics; Numerical simulation; Stimulated emission; Transmission electron microscopy; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2003.819700
  • Filename
    1255621