Title :
Broadband low-power amplifier with high gain and mixer modes using quantum-well GaAs FET technology
Author :
Wennekers, P. ; Bosch, Ricard ; Reinert, Wolfgang ; Huelsmann, A. ; Kaufel, G. ; Koehler, Katrina ; Raynor, B. ; Schneider, Jurgen
Author_Institution :
Fraunhofer-Inst. for Appl. Solid State Phys., Freiburg, Germany
fDate :
6/18/1992 12:00:00 AM
Abstract :
A broadband amplifier chip has been fabricated using enhancement/depletion quantum-well FETs with 0.3 mu m gate lengths. In amplifier mode with unmatched input and single ended output the chip exhibits 30 dB gain and 6.5 GHz bandwidth. Matching extends the bandwidth to 9.0 GHz. In mixer mode at 12 GHz input frequency and 1.5 GHz IF frequency the chip shows 11.5 dB conversion gain. The chip has a power dissipation of 125 mW at a supply voltage of 3.50 V.
Keywords :
MMIC; field effect integrated circuits; gallium arsenide; linear integrated circuits; microwave amplifiers; mixers (circuits); wideband amplifiers; 0.3 micron; 1.5 GHz; 11.5 dB; 12 GHz; 125 mW; 3.5 V; 30 dB; 6.5 GHz; 9 GHz; A broadband amplifier chip; FET technology; GaAs; MMIC; amplifier mode; depletion FETs; enhancement FETs; high gain; low-power amplifier; mixer modes; power dissipation; quantum-well;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920784
