DocumentCode
847957
Title
Broadband low-power amplifier with high gain and mixer modes using quantum-well GaAs FET technology
Author
Wennekers, P. ; Bosch, Ricard ; Reinert, Wolfgang ; Huelsmann, A. ; Kaufel, G. ; Koehler, Katrina ; Raynor, B. ; Schneider, Jurgen
Author_Institution
Fraunhofer-Inst. for Appl. Solid State Phys., Freiburg, Germany
Volume
28
Issue
13
fYear
1992
fDate
6/18/1992 12:00:00 AM
Firstpage
1241
Lastpage
1243
Abstract
A broadband amplifier chip has been fabricated using enhancement/depletion quantum-well FETs with 0.3 mu m gate lengths. In amplifier mode with unmatched input and single ended output the chip exhibits 30 dB gain and 6.5 GHz bandwidth. Matching extends the bandwidth to 9.0 GHz. In mixer mode at 12 GHz input frequency and 1.5 GHz IF frequency the chip shows 11.5 dB conversion gain. The chip has a power dissipation of 125 mW at a supply voltage of 3.50 V.
Keywords
MMIC; field effect integrated circuits; gallium arsenide; linear integrated circuits; microwave amplifiers; mixers (circuits); wideband amplifiers; 0.3 micron; 1.5 GHz; 11.5 dB; 12 GHz; 125 mW; 3.5 V; 30 dB; 6.5 GHz; 9 GHz; A broadband amplifier chip; FET technology; GaAs; MMIC; amplifier mode; depletion FETs; enhancement FETs; high gain; low-power amplifier; mixer modes; power dissipation; quantum-well;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19920784
Filename
144360
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