The evaluation of performance parameters of MOSFETs with alternative gate dielectrics

This brief discusses a benchmarking methodology for the evaluation of performance parameters (g_mmax and I_dsat) of MOSFETs with alternative gate dielectrics. It is shown that assuming ideal scaling for either or with electrical oxide thickness (g_mmax or I_dsat ∝ T_oxinv^-α with α = 1) instead of using experimental scaling trends for a baseline dielectric results in unrealistically pessimistic conclusions about the performance of alternative gate dielectrics. Factors In addition to mobility reduction which can contribute to sub-ideal scaling (α < 1) for any dielectric are discussed. This bench marking methodology for performance evaluation is demonstrated for oxynitride gate dielectric films with equivalent oxide thickness (EOT) approaching 11 Å.